1 http:// www.sirectsemi.com fast switching diode array ? 150mamp 75vol t features -for surface mounted applications -low profile package -built-in strain relief -metal silicon junction, majority carrier conduction -low power loss, high efficiency -high current capability, low forward voltage drop -for use in low voltage high frequency inverters, free wheeling and polarity protection application -high temperature soldering guaranteed -high reliability -high surge current capability -lead free device -esd sensitive product handling required mechanical data -case molded plastic -polarity color band denotes cathode end maximum ratings and electrical characteristics type symbol BAV16BPT unit maximum non-repetitive peak reverse voltage v rm 100 v maximum rms voltage v rms 53 v maximum repetitive peak reverse and dc blocking voltage v rrm , v dc 75 v maximum average forward rectified current i o 150 ma non-repetitive peak forward urge current @ t = 1.0usec @t = 1.0sec i fsm 2.0 1.0 a maximum instantaneous forward voltage @ i f = 1.0ma @ i f = 10ma @ i f = 50ma @ i f = 150ma v f 0.715 0.855 1.00 1.25 v maximum average reverse current @t j = 25 o c @t j = 150 o c i r 1.0 50 a typical junction capacitance (note 1) c j 2.0 pf maximum reverse recovery time (note 2) t rr 4.0 nsec thermal resistance junction to ambient (note 3) r ja 625 o c/w maximum storage and operating temperature range t j , t stg -65 - 150 o c note: . 1.measured at 1.0 mhz and applied reverse voltage of 0 volts august 2007 / rev.5 2.measured at applied forward current of 10ma and reverse current of 10ma 3.device mounted on fr-4 by 1 inch x 0.85 inch x 0.062 inch sod-123 .028(0.70) .018(0.45) .071(1.80) .055(1.40) .112(2.85) .100(2.55) .008(0.2) .053(1.35) .035(0.90) .004(0.12) .153(3.90) .140(3.55) .020(0.50) e l e c t r o n i c BAV16BPT
2 http:// www.sirectsemi.com forward current , (a) 1m 0 0.4 0.8 forward voltage , (v) figure 1. forward characteristics 10m 100m 1.0 0.6 0.2 1 1.2 1.4 1.6 -30 25 50 ta = 85 0 reverse current , (a) 0.1n 0 20 reverse voltage , (v) figure 2. reverse characteristics 10n 1u 40 60 1n 100n 10u 100u 80 ta = 100 75 50 25 10 30 50 70 0 -25 junction capacitance , (pf) 0 4 8 reverse voltage , (v) figure 3. typical junction capacitance 12 0 2 10 f = 1mhz 16 2 6 10 14 average forward current , (%) 0 0 50 100 125 ambient temperature , figure 4. forward current derating curve 50 150 75 25 25 75 100 125 reverse recovery time , (ns) 0 0 4 8 forward current , (ma) figure 5. reverse recovery time 4 10 6 2 2 6 8 v r = 6v BAV16BPT sirectifier global corp., delaware, u.s.a. u.s.a.: sgc@sirectsemi.com france: ss@sirectsemi.com taiwan: se@sirectsemi.com hong kong: hk@sirectsemi.com china: st@sirectsemi.com ? thailand: th@sirectsemi.com philippines: aiac@sirectsemi.com belize: belize@sirectsemi.com
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